Thermal Oxidation & Non-metallic Anneal Furnace
Located in our Class 100 cleanroom, the thermal oxidation furnace is primarily used for growing a thermal oxide layer on silicon or annealing clean substrates that have no exposed metal layers. Wafers and substrates less than 5" in diameter can be accomodated. Oxidation is performed at high temperatures of around 1000C either utilizing dry oxygen or wet utilizing a using a bubbler. No exposed metals are allowed inside the tube.